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HN1C01FE

Features: ·Small package (Dual type)·High voltage and high current : VCEO = 50V, IC = 150mA (max)·High hFE : hFE = 120~400·Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)Specifications Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Col...

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HN1C01FE: Features: ·Small package (Dual type)·High voltage and high current : VCEO = 50V, IC = 150mA (max)·High hFE : hFE = 120~400·Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)Sp...

HN1C01FE Data Sheet

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Part Number:
HN1C01FE
Supply Ability:
5000

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Product Details

Description



Features:

·Small package (Dual type)
·High voltage and high current : VCEO = 50V, IC = 150mA (max)
·High hFE : hFE = 120~400
·Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


Specifications

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 60 V
Emitter to Base Voltage VEBO 50 V
Collector current IC 150 A
Base current IB 30 A
Collector power dissipation PC 100 A
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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