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HN1C01FU

Application· Small package (Dual type)· High voltage and high current: VCEO = 50V, IC = 150mA (max)· High hFE : hFE = 120~400· Excellent hFE linearity: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V ...

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HN1C01FU: Application· Small package (Dual type)· High voltage and high current: VCEO = 50V, IC = 150mA (max)· High hFE : hFE = 120~400· Excellent hFE linearity: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ....

HN1C01FU Data Sheet

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HN1C01FU
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5000

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Product Details

Description



Application

· Small package (Dual type)
· High voltage and high current
: VCEO = 50V, IC = 150mA (max)
· High hFE : hFE = 120~400
· Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


Specifications

Characteristics Symbol Rating Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Base current IB 30 mA
Collector power dissipation PC* 200 mW
Operating Junction Temperature TJ 125
Storage Temperature Tstg −55~125


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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