Features: 8A, 500V3.7V VCE(SAT)Typical Fall Time - 1800nsHigh Input ImpedanceTJ = +150 oCPinoutSpecificationsCollector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCESEmitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . ...
HGTD8P50G1,HGTD8P50G1S: Features: 8A, 500V3.7V VCE(SAT)Typical Fall Time - 1800nsHigh Input ImpedanceTJ = +150 oCPinoutSpecificationsCollector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complementary power switch and HGTD8P50G1 and the HGTD8P50G1S are ideal for half bridge circuit configurations. These types can be operated directly from low power integrated circuits.