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HGTD10N50F1

Features: • 10A, 400V and 500V• VCE(ON) 2.5V Max.• TFALL £1.4ms• Low On-State Voltage• Fast Switching Speeds• High Input ImpedanceApplication• Power Supplies• Motor Drives• Protective CircuitsPinoutSpecificationsCollector-Emitter Voltage ...

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SeekIC No. : 004362129 Detail

HGTD10N50F1: Features: • 10A, 400V and 500V• VCE(ON) 2.5V Max.• TFALL £1.4ms• Low On-State Voltage• Fast Switching Speeds• High Input ImpedanceApplication• Power S...

HGTD10N50F1 Data Sheet

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Part Number:
HGTD10N50F1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 10A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL £1.4ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance


Application

• Power Supplies
• Motor Drives
• Protective Circuits


Pinout

Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .   VCES 400 500 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .   VCGR 400 500 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  . VGE ±20 ±20 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  IC25 12 12 A
Collector Current Continuous at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  IC90 10 10 A
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  PD 75 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  0.6 0.6 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .  .TJ, TSTG -55 to +150 -55 to +150


Description

The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.




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