Features: • 10A, 400V and 500V• VCE(ON) 2.5V Max.• TFALL £1.4ms• Low On-State Voltage• Fast Switching Speeds• High Input ImpedanceApplication• Power Supplies• Motor Drives• Protective CircuitsPinoutSpecificationsCollector-Emitter Voltage ...
HGTD10N40F1: Features: • 10A, 400V and 500V• VCE(ON) 2.5V Max.• TFALL £1.4ms• Low On-State Voltage• Fast Switching Speeds• High Input ImpedanceApplication• Power S...
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The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.