IGBT Transistors 14a 600V N-Ch IGBT UFS Series
HGTD7N60C3S9A: IGBT Transistors 14a 600V N-Ch IGBT UFS Series
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 1.6 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 14 A | Gate-Emitter Leakage Current : | +/- 250 nA | ||
Power Dissipation : | 60 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-252AA-3 | Packaging : | Reel |
Technical/Catalog Information | HGTD7N60C3S9A |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 14A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 7A |
Power - Max | 60W |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HGTD7N60C3S9A HGTD7N60C3S9A |