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HGTD7N60C3

Features: 14A, 600V at Tc = 25 °C600V Switching SOA CapabilityTypical Fall Time . . . . . . . . . . . . . .140ns at TJ = 150° CShort Circuit RatingLow Conduction LossSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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SeekIC No. : 004362143 Detail

HGTD7N60C3: Features: 14A, 600V at Tc = 25 °C600V Switching SOA CapabilityTypical Fall Time . . . . . . . . . . . . . .140ns at TJ = 150° CShort Circuit RatingLow Conduction LossSpecificationsCollector-Emitte...

HGTD7N60C3 Data Sheet

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Part Number:
HGTD7N60C3
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Description



Features:

14A, 600V at Tc = 25 °C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . .140ns at TJ = 150° C
Short Circuit Rating
Low Conduction Loss


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At T = 25° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At T = 110° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150 C, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = 25° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . PD
Power Dissipation Derating T C> 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . .C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , TJ STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC
Short Circuit Withstand Time (Note 2) at V GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC



Description

The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These  HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3  devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25° C and 150 °C.

The  HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3  IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls,power supplies and drivers for solenoids, relays and contactors.




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