Features: • 6A, 400V and 500V• VCE(ON): 2.5V Max.• TFALL: 1.0ms• Low On-State Voltage• Fast Switching Speeds• High Input ImpedanceApplication• Power Supplies• Motor Drives• Protective CircuitsSpecificationsCollector-Emitter Voltage . . . . . . ...
HGTD6N40E1: Features: • 6A, 400V and 500V• VCE(ON): 2.5V Max.• TFALL: 1.0ms• Low On-State Voltage• Fast Switching Speeds• High Input ImpedanceApplication• Power Supplie...
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The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.