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HGTD3N60C3S9A

IGBT Transistors 6a 600V N-Ch IGBT UFS Series

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SeekIC No. : 00143689 Detail

HGTD3N60C3S9A: IGBT Transistors 6a 600V N-Ch IGBT UFS Series

HGTD3N60C3S9A Data Sheet

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Part Number:
HGTD3N60C3S9A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.65 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 6 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 33 W Maximum Operating Temperature : + 150 C
Package / Case : TO-252AA-3 Packaging : Reel    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 250 nA
Continuous Collector Current at 25 C : 6 A
Collector-Emitter Saturation Voltage : 1.65 V
Power Dissipation : 33 W
Package / Case : TO-252AA-3


Parameters:

Technical/Catalog InformationHGTD3N60C3S9A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)6A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 3A
Power - Max33W
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGTD3N60C3S9A
HGTD3N60C3S9A



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