Features: *Low on-resistance*Capable of 2.5V gate drive*Optimal DC/DC battery applicationPinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±20 V Drain Current3, VGS@4.5V ID@TA=25 5.0 mA Drai...
GTS9928E: Features: *Low on-resistance*Capable of 2.5V gate drive*Optimal DC/DC battery applicationPinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V ...
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Parameter |
Symbol |
Ratings |
Unit |
Drain-Source Voltage |
VDS |
20 |
V |
Gate-Source Voltage |
VGS |
±20 |
V |
Drain Current3, VGS@4.5V |
ID@TA=25 |
5.0 |
mA |
Drain Current3, VGS@4.5V |
ID@TA=70 |
3.5 |
mA |
Pulsed Drain Current1 |
IDM |
25 |
mA |
Power Dissipation |
PD@TA=25 |
2 |
W |
Linear Derating Factor |
0.008 |
W/ | |
Operating Junction and Storage Temperature Range |
Tj, Tstg |
-55 ~ +150 |
The GTS9928E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.