Features: Features *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application *Surface mount packageSpecifications Symbol Parameter Max. Units Linear Derating Factor 0.008 W/ VDSVGS Drain-Source VoltageGate-to-Source Voltage 20±12 VV ID @ TC = 25ID @ ...
GTS9922E: Features: Features *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application *Surface mount packageSpecifications Symbol Parameter Max. Units Linear Derating Fac...
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Symbol | Parameter | Max. | Units |
Linear Derating Factor | 0.008 | W/ | |
VDS VGS |
Drain-Source Voltage Gate-to-Source Voltage |
20 ±12 |
V V |
ID @ TC = 25 ID @ TC = 100 IDM |
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current |
6.8 5.4 25 |
A |
PD @ TC = 25 | Maximum Power Dissipation | 1 | W |
TJ, TSTG | Operating Junction Storage Temperature Range |
-55 ~ +150 |
The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.