Features: ·Low on-resistance·Capable of 2.5V gate drive·Low drive current·Surface mount packageSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3 , VGS@10V ID @TA=25°C 4.6 A Continuous Drai...
GTS9926E: Features: ·Low on-resistance·Capable of 2.5V gate drive·Low drive current·Surface mount packageSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source...
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Parameter | Symbol | Ratings | Unit |
Drain-Source Voltage | VDS | 20 | V |
Gate-Source Voltage | VGS | ±12 | V |
Continuous Drain Current3 , VGS@10V | ID @TA=25°C | 4.6 | A |
Continuous Drain Current3 , VGS@10V | ID @TA=70°C | 3.7 | A |
Pulsed Drain Current1,2 | IDM | 20 | A |
Total Power Dissipation | PD @Ta=25°C | 1 | W |
Linear Derating Factor | 0.008 | W/°C | |
Operating Junction and Storage Temperature Range | Tj, Tstg | -55 ~ +150 | °C |
The GTS9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.