Features: *Low on-resistance*Capable of 2.5V gate drive*Low drive currentSpecifications Parameter Symbol Ratings Unit Drain-Source VoltageGate-Source Voltage VDSVGS 20±12 VV Drain Current3 ,VGS@4.5VDrain Current3 ,VGS@4.5V ID @TA=25ID @TA=70 64.8 AA Pulsed Drain Current1Pow...
GTS9926: Features: *Low on-resistance*Capable of 2.5V gate drive*Low drive currentSpecifications Parameter Symbol Ratings Unit Drain-Source VoltageGate-Source Voltage VDSVGS 20±12 VV Drain ...
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Parameter | Symbol | Ratings | Unit |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
20 ±12 |
V V |
Drain Current3 ,VGS@4.5V Drain Current3 ,VGS@4.5V |
ID @TA=25 ID @TA=70 |
6 4.8 |
A A |
Pulsed Drain Current1 Power Dissipation |
IDM PD @TA=25 |
20 1 |
A W |
Operating Junction and Storage Temperature Range | Tj,Tstg | -55 ~ +150 | |
Linear Derating Factor | 0.008 | W/ |
The GTS9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.