Features: Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1600A Per moduleApplication High Reliability Inverters Motor Controllers Traction Drives Resonant ConvertersPinoutSpecifications Symbol Parameter Test Conditions Max. Units ...
GP1601FSS18: Features: Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1600A Per moduleApplication High Reliability Inverters Motor Controllers Traction Dri...
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Symbol | Parameter | Test Conditions | Max. | Units |
VCES | Collector-emitter voltage | VGE = 0V | 1800 | V |
VCES | Gate-emitter voltage | ±20 | V | |
IC | Continuous collector current | Tcase = 70°C for Tj = 125°C | 1600 | A |
IC(PK) | Peak collector current | 1ms, Tcase = 115˚C | 3200 | A |
Pmax | Max. transistor power dissipation | Tcase = 25˚C, Tj = 150˚C | 11.4 | kW |
Visol | Isolation voltage | Commoned terminals to base plate. AC RMS, 1 min, 50Hz | 4000 | V |
The Powerline range of high power modules GP1601FSS18 includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP1601FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.
The GP1601FSS18 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.