GP1600FSS12

Features:

n - Channel
Enhancement Mode
High Input Impedance
Optimised For High Power High Frequency Operation
Isolated Base
Full 1200V Capability
1600A Per Module


Application

High Power Switching
Motor Control
Inverters
Traction Systems


Specifications

Symbol	Parameter	Conditions	Min.	Max.	Units
Rth(j-c)	Thermal resistance - transistor	DC junction to case		11	oC/kW
Rth(j-c)	Thermal resistance - diode	DC junction to case		20	oC/kW
Rth(c-h)	Thermal resistance - Case to heatsink (per module)	Mounting torque 5Nm (with mounting grease)		8	oC/kW
Tj	Junction temperature	Transistor		150	oC
		Diode		125	oC
Tstg	Storage temperature range		40	125	oC
	Screw torque	Mounting - M6		5	Nm
		Electrical connections - M4		2	Nm
		Electrical connections - M8		10	Nm

Description

The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the GP1600FSS12 is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

Fast switching times of GP1600FSS12 allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.

GP1600FSS12 incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

The powerline range of high power modules GP1600FSS12 includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands.

GP1600FSS12 applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters.