CHA3093c

Features:

·Broadband performances : 20-40GHz
·20dBm output power.
·22dB gain
·Very good broadband input matching
·On chip output power level DC detector
·Low DC power consumption, 330mA @ 3.5V
·Chip size : 0.83 X 1.72 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vds	Drain bias voltage_small signal (2)	4.0	V
Ids	Drain bias current_small signal	470	mA
Vgs	Gate bias voltage	-2 to +0.4	V
Vdg	Drain Gate voltage (Vds Vgs)	+5	V
Pin	Maximum continuous input power (2) Maximum peak input power overdrive (3)	+4 (@ 20GHz) -1 (@ 40GHz) +15	dBm dBm
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +125

Description

The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process.

A B.I.T. ( Build In Test ) monitors a DC voltage CHA3093c that is representative of the microwave output power.

CHA3093c is manufactured with a PM-HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA3093c is available in chip form.