CHA3092RBF

Features:

·Broad band performance: 20-33GHz
·Gain = 20dB (typical)
·Output power (P-1dB): 19dBm (typical)
·Return loss < -6dB
·Low DC power consumption, 300mA
·SMD leadless package
·Dimensions: 5.08 x 5.08 x 0.97 mm3


Specifications

Symbol	Parameter	Values	Unit
Vds	Drain bias voltage_small signal (2)	4.0	V
Ids	Drain bias current_small signal	400	mA
Vgs	Gate bias voltage	-2 to +0.4	V
Vdg	Negative Drain Gate voltage (= Vds Vgs)	+5	V
Pin	Maximum continuous input power (2) Maximum peak input power overdrive (3)	+4 +15	dBm dBm
Ta	Operating temperature range (4)	-40 to +85
Tstg	Storage temperature range	-55 to +155

Description

The monolithic microwave IC (MMIC) in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. CHA3092RBF is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA3092RBF is supplied in a new SMD leadless chip carrier.