CHA3092

Features:

·Broadband performances : 20-33GHz
·20dBm output power.
·22dB ±1.0dB gain
·Very good broadband input matching
·On chip output power level DC detector
·Low DC power consumption, 300mA @ 3.5V
·Chip size : 0.88 X 1.72 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vds	Drain bias voltage_small signal (2)	4.0	V
Ids	Drain bias current_small signal	400	mA
Vgs	Gate bias voltage	-2 to +0.4	V
Vdg	Negative Drain Gate voltage (= Vds Vgs)	+5	V
Pin	Maximum continuous input power (2) Maximum peak input power overdrive (3)	+4 +15	dBm dBm
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +155

Description

The CHA3092 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.

CHA3092 A B.I.T. ( Build In Test ) monitors a DC voltage that is representative of the microwave output power.

CHA3092 is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA3092 is available in chip form.