CHA3063

Features:

·Broad band performance 5.5-23GHz
·21dBm output power (Psat)
·19dB gain, ± 1dB gain flatness
·PAE:11%@P-1dB typical
·Chip size : 1.33 x 0.910x 0.1mm


Specifications

Symbol	Parameter	Valuesb	Unit
Vds	Drain bias voltage_small signal	5.0	V
Ids	Drain bias current_small signal	210	mA
Vg	Gate bias voltage	-2 to +0.4	V
Ig	Gate bias current	0.7	mA
Vgd	Maximun negative gate drain Voltage (Vg-Vd)	-5	V
Pin	Maximum continuous input power Maximum peak input power overdrive (2)	+1 +15	dBm dBm
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +125

Description

The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounds.This helps simplify the assembly process.

CHA3063 is manufactured with a PM- HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA3063 is supplied in chip form.