Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 300 W IC Device Current* 8.0 A VCC Collector-Supply Voltage* 40 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °C DescriptionThe AM809...
AM80912-085: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 300 W IC Device Current* 8.0 A VCC Collector-Supply Voltage* 40 V TJ Junction Temperature...
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Features: SpecificationsDescriptionThe AM80610-018 possesses the features of refractory/gold metal...
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 57 W ...
Symbol | Parameter | Value | Unit |
PDISS | Power Dissipation* (TC 100°C) | 300 | W |
IC | Device Current* | 8.0 | A |
VCC | Collector-Supply Voltage* | 40 | V |
TJ | Junction Temperature (Pulsed RF Operation) | 250 | °C |
TSTG | Storage Temperature | - 65 to +200 | °C |