AM80912-030

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC  85°C)	75	W
IC	Device Current*	3.5	A
VCC	Collector-Supply Voltage*	40	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.

Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM80912-030 is supplied in the hermetic metal/ ceramic package with internal input matching structures.