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AFM08P2-000

Features: `24 dBm Output Power @ 18 GHz`High Associated Gain, 8.5 dB @ 18 GHz`High Power Added Efficiency, 20%`Broadband Operation, DC40 GHz`0.25 mm Ti/Pd/Au Gates`Passivated Surface`Through-Substrate Via Hole GroundingSpecifications Characteristic Value Drain to Source Voltage (VDS) ...

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SeekIC No. : 004278551 Detail

AFM08P2-000: Features: `24 dBm Output Power @ 18 GHz`High Associated Gain, 8.5 dB @ 18 GHz`High Power Added Efficiency, 20%`Broadband Operation, DC40 GHz`0.25 mm Ti/Pd/Au Gates`Passivated Surface`Through-Substra...

AFM08P2-000 Data Sheet

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Part Number:
AFM08P2-000
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

`24 dBm Output Power @ 18 GHz
`High Associated Gain, 8.5 dB @ 18 GHz
`High Power Added Efficiency, 20%
`Broadband Operation, DC40 GHz
`0.25 mm Ti/Pd/Au Gates
`Passivated Surface
`Through-Substrate Via Hole Grounding


Specifications

Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-4 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
2 mA
Total Power Dissipation (PT)
1.4W
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C



Description

The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 mm and a total gate periphery of 800 mm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. AFM08P2-000 employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.Through-substrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance.




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