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AFM04P3-212

Features: `Low Noise Figure, 0.6 dB @ 4 GHz`20 dBm Output Power @ 18 GHz`High Associated Gain, 13 dB @ 4 GHz`High Power Added Efficiency, 25%`Broadband Operation, DC26 GHz`Available in Tape and Reel PackagingSpecifications Characteristic Value Drain to Source Voltage (VDS) 6 V Ga...

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SeekIC No. : 004278546 Detail

AFM04P3-212: Features: `Low Noise Figure, 0.6 dB @ 4 GHz`20 dBm Output Power @ 18 GHz`High Associated Gain, 13 dB @ 4 GHz`High Power Added Efficiency, 25%`Broadband Operation, DC26 GHz`Available in Tape and Reel...

AFM04P3-212 Data Sheet

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Part Number:
AFM04P3-212
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Low Noise Figure, 0.6 dB @ 4 GHz
`20 dBm Output Power @ 18 GHz
`High Associated Gain, 13 dB @ 4 GHz
`High Power Added Efficiency, 25%
`Broadband Operation, DC26 GHz
`Available in Tape and Reel Packaging


Specifications

Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-4 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
1 A
Total Power Dissipation (PT)
700 mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C



Description

The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 mm and a total gate periphery of 400 mm. These AFM04P3-212, 213  have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.They also have excellent noise performance and can be used in the first and second stage of low noise amplifier design. The AFM04P3 employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.




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