Position: Home  > All Categories> Integrated Circuits (ICs) > AFM04P2-000

AFM04P2-000

Features: `21 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Efficiency, 25%`Broadband Operation, DC40 GHz`0.25 µm Ti/Pd/Au Gates`Passivated Surface`Through-Substrate Via Hole GroundingSpecifications Characteristic Value Drain to Source Voltage (VDS...

product image

AFM04P2-000 Picture
See larger image
SeekIC No. : 004278544 Detail

AFM04P2-000: Features: `21 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Efficiency, 25%`Broadband Operation, DC40 GHz`0.25 µm Ti/Pd/Au Gates`Passivated Surface`Through-Sub...

AFM04P2-000 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
AFM04P2-000
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`21 dBm Output Power @ 18 GHz
`High Associated Gain, 9 dB @ 18 GHz
`High Power Added Efficiency, 25%
`Broadband Operation, DC40 GHz
`0.25 µm Ti/Pd/Au Gates
`Passivated Surface
`Through-Substrate Via Hole Grounding


Specifications

Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-4 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
1 mA
Total Power Dissipation (PT)
700mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C



Description

The AFM04P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm. The device has excellent gain and power performance through 40 GHz, making AFM04P2-000 suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Throughsubstrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Crystals and Oscillators
WT325BI0030.000000
2SB49
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Filters
PICO2205A
PICO2204A
Isolators
HCPL062N
HCPL316J
View more