Features: `21 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Efficiency, 25%`Broadband Operation, DC26 GHz`0.25 mm Ti/Pd/Au Gates`Passivated SurfaceSpecifications Characteristic Value Drain to Source Voltage (VDS) 6 V Gate to Source Voltage (VGS) ...
AFM04P3-000: Features: `21 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Efficiency, 25%`Broadband Operation, DC26 GHz`0.25 mm Ti/Pd/Au Gates`Passivated SurfaceSpecifications ...
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Features: `21 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Effic...
Features: `Low Noise Figure, 0.6 dB @ 4 GHz`20 dBm Output Power @ 18 GHz`High Associated Gain, 13 ...
Features: `Low Noise Figure, 0.6 dB @ 4 GHz`20 dBm Output Power @ 18 GHz`High Associated Gain, 13 ...
Characteristic |
Value |
Drain to Source Voltage (VDS) |
6 V |
Gate to Source Voltage (VGS) |
-4 V |
Drain Current (IDS) |
IDSS |
Gate Current (IGS) |
1 A |
Total Power Dissipation (PT) |
700 mW |
Storage Temperature (TST) |
-65 to +150°C |
Channel Temperature (TCH) |
175°C |
The AFM04P3-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 mm and a total gate periphery of 400 mm. The AFM04P3-000 has excellent gain and power performance through 26 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.The device employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.