AFM06P3-213 Selling Leads, Price trend, AFM06P3-213 DataSheet download, circuit diagram from SeekIC.com

Features: `22 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Efficiency, 23%`Broadband Operation, DC18 GHz`0.25 mm Ti/Pd/Au Gates`Passivated SurfaceSpecifications Characteristic Value Drain to Source Voltage (VDS) 6 V Gate to Source Voltage (VGS) ...

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SeekIC No. : 004278550 Detail

AFM06P3-213: Features: `22 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Efficiency, 23%`Broadband Operation, DC18 GHz`0.25 mm Ti/Pd/Au Gates`Passivated SurfaceSpecifications ...

AFM06P3-213 Data Sheet

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Part Number:: AFM06P3-213
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/21

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Features: `21 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Effic...
AFM04P3-212 evaluate
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Product Details

Description

Features:

`22 dBm Output Power @ 18 GHz
`High Associated Gain, 9 dB @ 18 GHz
`High Power Added Efficiency, 23%
`Broadband Operation, DC18 GHz
`0.25 mm Ti/Pd/Au Gates
`Passivated Surface

Specifications

Characteristic	Value
Drain to Source Voltage (V_DS)	6 V
Gate to Source Voltage (V_GS)	-4 V
Drain Current (I_DS)	I_DSS
Gate Current (I_GS)	1 A
Total Power Dissipation (P_T)	1.1W
Storage Temperature (T_ST)	-65 to +150°C
Channel Temperature (T_CH)	175°C

Description

The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 mm and a total gate periphery of 600 mm. These AFM06P3-212, 213 have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.They employ Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.

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AFM06P3-213

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