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AFM06P3-212

Features: `22 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Efficiency, 23%`Broadband Operation, DC18 GHz`0.25 mm Ti/Pd/Au Gates`Passivated SurfaceSpecifications Characteristic Value Drain to Source Voltage (VDS) 6 V Gate to Source Voltage (VGS) ...

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SeekIC No. : 004278549 Detail

AFM06P3-212: Features: `22 dBm Output Power @ 18 GHz`High Associated Gain, 9 dB @ 18 GHz`High Power Added Efficiency, 23%`Broadband Operation, DC18 GHz`0.25 mm Ti/Pd/Au Gates`Passivated SurfaceSpecifications ...

AFM06P3-212 Data Sheet

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Part Number:
AFM06P3-212
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`22 dBm Output Power @ 18 GHz
`High Associated Gain, 9 dB @ 18 GHz
`High Power Added Efficiency, 23%
`Broadband Operation, DC18 GHz
`0.25 mm Ti/Pd/Au Gates
`Passivated Surface


Specifications

Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-4 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
1 A
Total Power Dissipation (PT)
1.1W
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C



Description

The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 mm and a total gate periphery of 600 mm. These AFM06P3-212, 213  have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.They employ Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.




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