AAT7551

Features: • Drain-Source Voltage (max): -20V• Continuous Drain Current1 (max): -2.7A @ 25°C• Low On-Resistance:- 100mΩ @ VGS = -4.5V- 175mΩ @ VGS = -2.5VApplication• Battery Packs• Battery-Powered Portable Equipment• Cellular and Cordless TelephonesS...

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SeekIC No. : 004261269 Detail

AAT7551: Features: • Drain-Source Voltage (max): -20V• Continuous Drain Current1 (max): -2.7A @ 25°C• Low On-Resistance:- 100mΩ @ VGS = -4.5V- 175mΩ @ VGS = -2.5VApplicationR...

floor Price/Ceiling Price

Part Number:
AAT7551
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/7/15

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Product Details

Description



Features:

• Drain-Source Voltage (max): -20V
• Continuous Drain Current1 (max): -2.7A @ 25°C
• Low On-Resistance:
- 100mΩ @ VGS = -4.5V
- 175mΩ @ VGS = -2.5V





Application

• Battery Packs
• Battery-Powered Portable Equipment
• Cellular and Cordless Telephones





Specifications

Symbol Description Value Units
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage ±12
ID Continuous Drain Current @ TJ = 150°C1 TA = 25°C ±2.7 A
TA = 70°C ±2.2
IDM Pulsed Drain Current2 ±8
IS Continuous Source Current (Source-Drain Diode)1 -0.6
TJ Operating Junction Temperature Range -55 to 150 °C
TSTG Storage Temperature Range -55 to 150 °C





Description

The AAT7551 is a dual low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package.






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