AAT7551 Selling Leads, Price trend, AAT7551 DataSheet download, circuit diagram from SeekIC.com

Features: • Drain-Source Voltage (max): -20V• Continuous Drain Current1 (max): -2.7A @ 25°C• Low On-Resistance:- 100mΩ @ VGS = -4.5V- 175mΩ @ VGS = -2.5VApplication• Battery Packs• Battery-Powered Portable Equipment• Cellular and Cordless TelephonesS...

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SeekIC No. : 004261269 Detail

AAT7551: Features: • Drain-Source Voltage (max): -20V• Continuous Drain Current1 (max): -2.7A @ 25°C• Low On-Resistance:- 100mΩ @ VGS = -4.5V- 175mΩ @ VGS = -2.5VApplicationR...

AAT7551 Data Sheet

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Part Number:: AAT7551
Supply Ability:: 5000

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1~5000

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Processing time
15 Days

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Upload time: 2024/12/25

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Recent History
What is this?

AAT7103 evaluate
Features: • V DS(MAX) = 25V• I D(MAX) (1) = 6.8 A@ 25°C• Low RDS(ON): • 26...
AAT7126 evaluate
Features: • V DS(MAX) = 30V• I D(MAX) 1 = 6.8A @ 25°C• Low R DS(ON) : • 26...
AAT7157 evaluate
Features: • VDS(MAX) = -20V• ID(MAX)1 = -5.8A @ 25• Low RDS(ON):• 36 m @ V...

Product Details

Description

Features:

• Drain-Source Voltage (max): -20V
• Continuous Drain Current1 (max): -2.7A @ 25°C
• Low On-Resistance:
- 100mΩ @ V_GS= -4.5V
- 175mΩ @ V_GS = -2.5V

Application

• Battery Packs
• Battery-Powered Portable Equipment
• Cellular and Cordless Telephones

Specifications

Symbol	Description		Value	Units
V_DS	Drain-Source Voltage		-20	V
V_GS	Gate-Source Voltage		±12
I_D	Continuous Drain Current @ T_J= 150°C¹	T_A = 25°C	±2.7	A
		T_A = 70°C	±2.2
I_DM	Pulsed Drain Current2		±8
I_S	Continuous Source Current (Source-Drain Diode)¹		-0.6
T_J	Operating Junction Temperature Range		-55 to 150	°C
T_STG	Storage Temperature Range		-55 to 150	°C

Description

The AAT7551 is a dual low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package.

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AAT7551

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