Features: • Drain-Source Voltage (max): -20V• Continuous Drain Current1 (max): -2.7A @ 25°C• Low On-Resistance:- 100mΩ @ VGS = -4.5V- 175mΩ @ VGS = -2.5VApplication• Battery Packs• Battery-Powered Portable Equipment• Cellular and Cordless TelephonesS...
AAT7551: Features: • Drain-Source Voltage (max): -20V• Continuous Drain Current1 (max): -2.7A @ 25°C• Low On-Resistance:- 100mΩ @ VGS = -4.5V- 175mΩ @ VGS = -2.5VApplicationR...
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Symbol | Description | Value | Units | |
VDS | Drain-Source Voltage | -20 | V | |
VGS | Gate-Source Voltage | ±12 | ||
ID | Continuous Drain Current @ TJ = 150°C1 | TA = 25°C | ±2.7 | A |
TA = 70°C | ±2.2 | |||
IDM | Pulsed Drain Current2 | ±8 | ||
IS | Continuous Source Current (Source-Drain Diode)1 | -0.6 | ||
TJ | Operating Junction Temperature Range | -55 to 150 | °C | |
TSTG | Storage Temperature Range | -55 to 150 | °C |
The AAT7551 is a dual low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package.