Features: • VDS(MAX) = -20V• ID(MAX)1 = -5.8A @ 25• Low RDS(ON):• 36 m @ VGS = -4.5V• 62 m @ VGS = -2.5VApplication• Battery Packs• Battery-powered portable equipmentPinoutSpecifications Symbol Description Value Units VDS Drain-Source V...
AAT7157: Features: • VDS(MAX) = -20V• ID(MAX)1 = -5.8A @ 25• Low RDS(ON):• 36 m @ VGS = -4.5V• 62 m @ VGS = -2.5VApplication• Battery Packs• Battery-powered portable...
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Symbol |
Description |
Value |
Units | |
VDS |
Drain-Source Voltage |
-20 |
V | |
VGS |
Gate-Source Voltage |
±12 | ||
ID |
Continuous Drain Current @ TJ=1501 |
TA =25 |
±5.8 |
A |
TA =70 |
±4.6 | |||
IDM |
Pulsed Drain Current 2 |
±24 | ||
IS |
Continuous Source Current (Source-Drain Diode)1 |
-1.5 | ||
PD |
Maximum Power Dissipation 1 |
TA =25 |
2.0 |
W |
TA =70 |
1.25 | |||
TJ, TSTG |
Operating Junction and Storage Temperature Range |
-55 to 150 |
The AAT7157 low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7157 is designed for use as a load switch in battery powered applications and protection in battery packs.