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AAT7103

Features: • V DS(MAX) = 25V• I D(MAX) (1) = 6.8 A@ 25°C• Low RDS(ON): • 26 mΩ @VGS = 4.5V • 41 mΩ @VGS = 2.5VApplication• Battery Packs• Cellular & Cordless Telephones• PDAs, Camcorders, and Cell PhonesPinoutSpecifications Symbol...

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SeekIC No. : 004261257 Detail

AAT7103: Features: • V DS(MAX) = 25V• I D(MAX) (1) = 6.8 A@ 25°C• Low RDS(ON): • 26 mΩ @VGS = 4.5V • 41 mΩ @VGS = 2.5VApplication• Battery Packs• Cellula...

AAT7103 Data Sheet

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Part Number:
AAT7103
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• V DS(MAX) = 25V
• I D(MAX) (1) = 6.8 A@ 25°C
• Low RDS(ON):
    • 26 mΩ @VGS = 4.5V
    • 41 mΩ @VGS = 2.5V


Application

• Battery Packs
• Cellular & Cordless Telephones
• PDAs, Camcorders, and Cell Phones


Pinout

Connection Diagram


Specifications

Symbol Description Value Units
VDS Drain-Source Voltage 25 V
VGS Gate-Source Voltage ±12
ID Continuous Drain Current @ TJ=150°C 1 TA = 25°C ±6.8 A
TA = 70°C ±5.4
IDM Pulsed Drain Current3 ±24
IS Continuous Source Current (Source-Drain Diode) 1 1.8
PD Maximum Power Dissipation 1 TA = 25°C 2.0 W
TA = 70°C 1.25
TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C



Description

The AAT7103 25V N-Channel Power MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, the product demonstrates high power handling and small size.




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