Features: • V DS(MAX) = 30V• I D(MAX) 1 = 6.8A @ 25°C• Low R DS(ON) : • 26 mΩ @VGS = 10V • 41 mΩ @ VGS = 4.5VApplication• Battery-powered portable equipment• Laptop computers• Desktop computers• DC/DC convertersPinoutSpecifications ...
AAT7126: Features: • V DS(MAX) = 30V• I D(MAX) 1 = 6.8A @ 25°C• Low R DS(ON) : • 26 mΩ @VGS = 10V • 41 mΩ @ VGS = 4.5VApplication• Battery-powered portable equ...
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Symbol | Description | Value | Units | |
VDS | Drain-Source Voltage | 30 | V | |
VGS | Gate-Source Voltage | ±20 | ||
ID | Continuous Drain Current @ TJ=150°C 1 | TA = 25°C | ±6.8 | A |
TA = 70°C | ±5.4 | |||
IDM | Pulsed Drain Current | ±24 | ||
IS | Continuous Source Current (Source-Drain Diode) 1 | 1.7 | ||
PD | Maximum Power Dissipation 1 | TA = 25°C | 2.0 | W |
TA = 70°C | 1.25 | |||
TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to 150 | °C |
The AAT7126 30V N-Channel Power MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size.