Features: Low power supply- VDD: 1.8V VDDQ : 1.8VLVCMOS compatible with multiplexed addressFour banks / Pulse RASMRS cycle with address key programs- CAS Latency (2 & 3)- Burst Length (1,2,4,8 & full page) - Burst Type (Sequential & Interleave)All inputs are sampled at the positive goi...
A43E26161: Features: Low power supply- VDD: 1.8V VDDQ : 1.8VLVCMOS compatible with multiplexed addressFour banks / Pulse RASMRS cycle with address key programs- CAS Latency (2 & 3)- Burst Length (1,2,4,8 &...
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Voltage on any pin relative to VSS (Vin, Vout ) . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +2.6V
Voltage on VDD supply relative to VSS (VDD, VDDQ )
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-1.0V to + 2.6V
Storage Temperature (TSTG) . . . . . . . . . -55°C to +150°C
Soldering Temperature X Time (TSLODER) . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C X 10sec
Power Dissipation (PD) . . . . . . . . . . . . . . . . . . . . . . . . 0.8W
Short Circuit Current (Ios) . . . . . . . . . . . . . . . . . . . . 50mA
The A43E26161 is 67,108,864 bits Low Power synchronous high data rate Dynamic RAM organized as 4 X 1,048,576 words by 16 bits, fabricated with AMIC's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device A43E26161 to be useful for a variety of high bandwidth, high performance memory system applications.