Features: Low power supply- VDD: 1.8V VDDQ : 1.8VLVCMOS compatible with multiplexed addressTwo banks / Pulse RASMRS cycle with address key programs- CAS Latency (2 & 3)- Burst Length (1,2,4,8 & full page) - Burst Type (Sequential & Interleave)All inputs are sampled at the positive goin...
A43E06321: Features: Low power supply- VDD: 1.8V VDDQ : 1.8VLVCMOS compatible with multiplexed addressTwo banks / Pulse RASMRS cycle with address key programs- CAS Latency (2 & 3)- Burst Length (1,2,4,8 &a...
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Voltage on any pin relative to VSS (Vin, Vout ) . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +2.6V
Voltage on VDD supply relative to VSS (VDD, VDDQ )
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-1.0V to + 2.6V
Storage Temperature (TSTG) . . . . . . . . . -55°C to +150°C
Soldering Temperature X Time (TSLODER) . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C X 10sec
Power Dissipation (PD) . . . . . . . . . . . . . . . . . . . . . . . . 0.8W
Short Circuit Current (Ios) . . . . . . . . . . . . . . . . . . . . 50mA
The A43E06321 is 33,554,432 bits Low Power synchronous high data rate Dynamic RAM organized as 2X 524,288 words by 32 bits, fabricated with AMIC's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.