DescriptionThe 50MT060WHTAPbF si designed as one kind of half bridge IGBT MTPs (warp speed IGBT) with current of 114A. 50MT060WHTAPbF's benefits include optimized for welding, UPS and SMPS applications, low EMI, requires less snubbing, direct mounting to heatsink, PCB solderable terminals and ve...
50MT060WHTAPbF: DescriptionThe 50MT060WHTAPbF si designed as one kind of half bridge IGBT MTPs (warp speed IGBT) with current of 114A. 50MT060WHTAPbF's benefits include optimized for welding, UPS and SMPS applica...
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Features: • Gen. 4 Ultrafast Speed IGBT Technology• HEXFRED TM Diode with UltraSoft Re...
The 50MT060WHTAPbF si designed as one kind of "half bridge" IGBT MTPs (warp speed IGBT) with current of 114A. 50MT060WHTAPbF's benefits include optimized for welding, UPS and SMPS applications, low EMI, requires less snubbing, direct mounting to heatsink, PCB solderable terminals and very low stray inductance design for high speed operation.
50MT060WHTAPbF has nine features. (1)Generation 4 warp speed IGBT technology. (2)HEXFRED antiparallel diodes with ultrasoft reverse recovery. (3)Very low conduction and switching losses. (4)Optional SMD thermistor (NTC). (5)Very low junction to case thermal resistance. (6)UL approved file E78996. (7)Speed 60kHz to 100kHz. (8)Compliant to RoHS directive 2002/95/EC. (9)Designed and qualified for industrial level. Those are all the main features.
Some absolute maximum ratings of 50MT060WHTAPbF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 114A at Tc=25°C and would be 50A at Tc=109°C. (3)Its pulsed collector current would be 350A. (4)Its peak switching current would be 350A. (5)Its diode continuous forward current would be 34A. (6)Its peak diode forward current would be 200A. (7)50MT060WHTAPbF's gate to emitter voltage would be +/-20V. (8)Its RMS isolation voltage would be 2500V. (9)Its maximum power dissipation would be 658W at Tc=25°C and would be 263w at Tc=100°C. 50MT060WHTAPbF should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of 50MT060WHTAPbF are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)50MT060WHTAPbF's gate threshold voltage would be min 3V and max 6V. (3)Its collector to emitter leaking current would be max 0.4mA at Vge=0V, Ic=600A and would be max 10mA at Vge=0V, Ic=600A, Tj=150°C. At present we have not got so much information about this IC and we would try hard to get more information about 50MT060WHTAPbF. If you have any question or suggestion or want to know more information please contact us for details. Thank you!