50MT060ULSTAPBF

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 100 A
Package / Case : MTP-14


Description

The 50MT060ULSTAPbF is designed as one kind of "low side chopper" IGBT MTPs (ultrafast speed IGBT) with current of 100A. 50MT060ULSTAPbF's benefits include optimized for welding, UPS and SMPS applications, low EMI, requires less snubbing, direct mounting to heatsink, PCB solderable terminals and very low junction to case thermal resistance.

50MT060ULSTAPbF has ten features. (1)Generation 4 ultrafast speed IGBT technology. (2)HEXFRED diode with ultrasoft reverse recovery. (3)Very low conduction and switching losses. (4)Optional SMD thermistor (NTC). (5)Al2O3 DBC. (6)Very low stray inductance design for high speed operation. (7)UL approved file E78996. (8)Speed 8kHz to 60kHz> 20kHz hard switching, > 200kHz resonant mode. (9)Compliant to RoHS directive 2002/95/EC. (10)Designed and qualified for industrial level. Those are all the main features.

Some absolute maximum ratings of 50MT060ULSTAPbF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 100A at Tc=25°C and would be 50A at Tc=122°C. (3)Its pulsed collector current would be 200A. (4)Its peak switching current would be 200A. (5)Its diode continuous forward current would be 48A. (6)Its peak diode forward current would be 200A. (7)50MT060ULSTAPbF's gate to emitter voltage would be +/-20V. (8)Its RMS isolation voltage would be 2500V. (9)Its maximum power dissipation IGBT would be 445W at Tc=25°C and would be 175W at Tc=100°C. (10)Its maximum power dissipation diode would be 205W at Tc=25°C and would be 83W at Tc=100°C. 50MT060ULSTAPbF should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 50MT060ULSTAPbF are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)50MT060ULSTAPbF's gate threshold voltage would be min 3V and max 6V. At present we have not got so much information about this IC and we would try hard to get more information about 50MT060ULSTAPbF. If you have any question or suggestion or want to know more information please contact us for details. Thank you!