Position: Home  > All Categories> Integrated Circuits (ICs) > 50MT060ULSA

50MT060ULSA

Features: • Gen. 4 Ultrafast Speed IGBT Technology• HEXFRED TM Diode with UltraSoft Reverse Recovery• Very Low Conduction and Switching Losses• Optional SMD Thermistor (NTC)• Al2 O3 DBC• Very Low Stray Inductance Design for High Speed Operation• UL approve...

product image

50MT060ULSA Picture
See larger image
SeekIC No. : 004232184 Detail

50MT060ULSA: Features: • Gen. 4 Ultrafast Speed IGBT Technology• HEXFRED TM Diode with UltraSoft Reverse Recovery• Very Low Conduction and Switching Losses• Optional SMD Thermistor (NTC)&...

50MT060ULSA Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
50MT060ULSA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Gen. 4 Ultrafast Speed IGBT Technology
• HEXFRED TM Diode with UltraSoft
  Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMD Thermistor (NTC)
• Al2 O3 DBC
• Very Low Stray Inductance Design for
  High Speed Operation
• UL approved ( file E78996 )


Specifications

Parameters   Max Units
VCES Collector-to-Emitter Voltage   600 V
IC Continuos Collector Current @ TC = 25°C 100 A
@ TC = 122°C 50
ICM Pulsed Collector Current   200 A
ILM Peak Switching Current   200 A
I F Diode Continuous Forward Current @ TC = 100°C 48 A
IFM Peak Diode Forward Current   200 A
VGE Gate-to-Emitter Voltage   +20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min   2500 V
PD Maximum Power
Dissipation		 IGBT@ TC = 25°C 445 W
IGBT@ TC = 100°C 175
Diode@ TC = 25°C 205
Diode@ TC = 100°C 83



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Switches
US32DMRJ
HBGQ22P-11ET
Resistors
A101G
3006P-1-205LF
Kits
IT243
UVSC-110-4E1
Optical Inspection Equipment
AA924
A21K4B
Filters
PICO2205A
PICO2204A
View more