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50MT060ULSA

Features: • Gen. 4 Ultrafast Speed IGBT Technology• HEXFRED TM Diode with UltraSoft Reverse Recovery• Very Low Conduction and Switching Losses• Optional SMD Thermistor (NTC)• Al2 O3 DBC• Very Low Stray Inductance Design for High Speed Operation• UL approve...

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SeekIC No. : 004232184 Detail

50MT060ULSA: Features: • Gen. 4 Ultrafast Speed IGBT Technology• HEXFRED TM Diode with UltraSoft Reverse Recovery• Very Low Conduction and Switching Losses• Optional SMD Thermistor (NTC)&...

50MT060ULSA Data Sheet

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Part Number:
50MT060ULSA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/8

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Product Details

Description



Features:

• Gen. 4 Ultrafast Speed IGBT Technology
• HEXFRED TM Diode with UltraSoft
  Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMD Thermistor (NTC)
• Al2 O3 DBC
• Very Low Stray Inductance Design for
  High Speed Operation
• UL approved ( file E78996 )


Specifications

Parameters   Max Units
VCES Collector-to-Emitter Voltage   600 V
IC Continuos Collector Current @ TC = 25°C 100 A
@ TC = 122°C 50
ICM Pulsed Collector Current   200 A
ILM Peak Switching Current   200 A
I F Diode Continuous Forward Current @ TC = 100°C 48 A
IFM Peak Diode Forward Current   200 A
VGE Gate-to-Emitter Voltage   +20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min   2500 V
PD Maximum Power
Dissipation		 IGBT@ TC = 25°C 445 W
IGBT@ TC = 100°C 175
Diode@ TC = 25°C 205
Diode@ TC = 100°C 83



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