50MT060WH

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis Mount
Series: -
Configuration: Half Bridge
Manufacturer: Vishay Semiconductors
Current - Collector Cutoff (Max): 400µA
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Current - Collector (Ic) (Max): 114A
Input Capacitance (Cies) @ Vce: 7.1nF @ 30V
Power - Max: 658W
Package / Case: 12-MTP
Supplier Device Package: 12-MTP


Features:

• Gen. 4 Warp Speed IGBT Technology
• HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMT Thermistor (NTC)
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for High Speed Operation
• UL E78996 approved


Specifications

Parameters		Max	Units
VCES Collector-to-Emitter Voltage		600	V
VCES Collector-to-Emitter Voltage	@ TC = 25°C	114	A
	@ TC = 109°C	50
ICM Pulsed Collector Current		350
ILM Peak Switching Current		350
I F Diode Continuous Forward Current	@ TC = 109°C	34
IFM Peak Diode Forward Current		200
VGE Gate-to-Emitter Voltage		± 20	V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min		2500
PD Maximum Power Dissipation	@ TC = 25°C	658	W
	@ TC = 100°C	263