50MT060ULS

Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis Mount
IGBT Type: -
Series: -
Current - Collector (Ic) (Max): 100A
Current - Collector Cutoff (Max): 250µA
Manufacturer: Vishay Semiconductors
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
Input Capacitance (Cies) @ Vce: 14.7nF @ 30V
Power - Max: 445W
Package / Case: 10-MTP
Supplier Device Package: 10-MTP


Features:

• Gen. 4 Ultrafast Speed IGBT Technology
• HEXFRED ^TM Diode with UltraSoft Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMT Thermistor (NTC)
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for High Speed Operation
• UL approved ( file E78996 )


Specifications

Parameters		Max	Units
VCES Collector-to-Emitter Voltage		600	V
VCES Collector-to-Emitter Voltage	@ TC = 25°C	100	A
	@ TC = 122°C	50
ICM Pulsed Collector Current		200
ILM Peak Switching Current		200
IF Diode Continuous Forward Current	@ TC = 100°C	48
IFM Peak Diode Forward Current		200
VGE Gate-to-Emitter Voltage		± 20	V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min		2500
PD Maximum Power Dissipation	IGBT @ TC = 25°C	445	W
	@ TC = 100°C	175
	Diode @ TC = 25°C	205
	@ TC = 100°C	83