Features: ` Low on-resistanceN-channel: RDS(on) 0.4 , VGS = 10 V, ID = 1.5 AP-channel: RDS(on)0.45 , VGS = 10 V, ID = 1.5 A` Capable of 4 V gate drive` Low drive current` High speed switching` High density mounting` Suitable for H-bridged motor driver` Discrete packaged devices of same dieN-channe...
4AM13: Features: ` Low on-resistanceN-channel: RDS(on) 0.4 , VGS = 10 V, ID = 1.5 AP-channel: RDS(on)0.45 , VGS = 10 V, ID = 1.5 A` Capable of 4 V gate drive` Low drive current` High speed switching` High ...
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Item | Symbol | Rating | Unit | |
Nch | Pch | |||
Drain to source voltage | VDSS | 60 | -60 | V |
Drain to source voltage | VGSS | ±20 | ±20 | V |
Drain current | ID | 3 | -3 | A |
Drain peak current | ID(pulse)*1 | 12 | -12 | A |
Body to drain diode reverse drain current | IDR | 3 | -3 | A |
Channel dissipation | Pch (Tc = 25)*2 | 28 | W | |
Channel dissipation | Pch*2 | 4 | W | |
Channel temperature | Tch | 150 | ||
Storage temperature | Tstg | 55 to +150 |