Features: * Low on-resistance N Channel: RDS(on) 0.17 W, VGS = 10 V, ID = 4 A P Channel : RDS(on) 0.2 W, VGS = 10 V, ID = 4 A* 4 V gate drive devices.* High density mountingSpecifications Item Symbol Ratings Unit Nch Pch Drain to source voltage VDSS 60 -60 V Ga...
4AM17: Features: * Low on-resistance N Channel: RDS(on) 0.17 W, VGS = 10 V, ID = 4 A P Channel : RDS(on) 0.2 W, VGS = 10 V, ID = 4 A* 4 V gate drive devices.* High density mountingSpecifications Item...
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Item |
Symbol |
Ratings |
Unit | |
Nch | Pch | |||
Drain to source voltage |
VDSS |
60 |
-60 |
V |
Gate to source voltage |
VGSS |
20 |
20 |
V |
Drain current |
ID |
8 |
-8 |
A |
Drain peak current |
ID(pulse)*1 |
32 |
32 |
A |
Body to drain diode reverse drain current |
IDR |
8 |
-8 |
A |
Channel dissipation |
Pch(Tc = 25)*2 |
28 |
W | |
Channel dissipation |
Pch*2 |
4.0 |
W | |
Channel temperature |
Tch |
150 |
C | |
Storage temperature |
Tstg |
55 to +150 |
C |