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4AM12

Features: ` Low on-resistanceN-channel: RDS(on) 0.075 , VGS = 10 V, ID = 4 AP-channel: RDS(on)0.12 , VGS = 10 V, ID = 4 A` Capable of 4 V gate drive` Low drive current` High speed switching` High density mounting` Suitable for H-bridged motor driver` Discrete packaged devices of same dieN-channel...

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SeekIC No. : 004231785 Detail

4AM12: Features: ` Low on-resistanceN-channel: RDS(on) 0.075 , VGS = 10 V, ID = 4 AP-channel: RDS(on)0.12 , VGS = 10 V, ID = 4 A` Capable of 4 V gate drive` Low drive current` High speed switching` High d...

4AM12 Data Sheet

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Part Number:
4AM12
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Low on-resistance
N-channel: RDS(on) 0.075 , VGS = 10 V, ID = 4 A
P-channel: RDS(on)0.12 , VGS = 10 V, ID = 4 A
` Capable of 4 V gate drive
` Low drive current
` High speed switching
` High density mounting
` Suitable for H-bridged motor driver
` Discrete packaged devices of same die
N-channel: 2SK971, 2SK1094
P-channel: 2SJ173, 2SJ176


Application

·High speed power switching


Specifications

Item Symbol Rating Unit
Nch Pch
Drain to source voltage VDSS 60 -60 V
Drain to source voltage VGSS ±20 ±20 V
Drain current ID 8 -8 A
Drain peak current ID(pulse)*1 32 -32 A
Body to drain diode reverse drain current IDR 8 -8 A
Channel dissipation Pch (Tc = 25)*2 28 W
Channel dissipation Pch*2 4 W
Channel temperature Tch 450
Storage temperature Tstg 55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. 4 Devices operation


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