Features: ` Low on-resistanceN-channel: RDS(on) 0.075 , VGS = 10 V, ID = 4 AP-channel: RDS(on)0.12 , VGS = 10 V, ID = 4 A` Capable of 4 V gate drive` Low drive current` High speed switching` High density mounting` Suitable for H-bridged motor driver` Discrete packaged devices of same dieN-channel...
4AM12: Features: ` Low on-resistanceN-channel: RDS(on) 0.075 , VGS = 10 V, ID = 4 AP-channel: RDS(on)0.12 , VGS = 10 V, ID = 4 A` Capable of 4 V gate drive` Low drive current` High speed switching` High d...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Item | Symbol | Rating | Unit | |
Nch | Pch | |||
Drain to source voltage | VDSS | 60 | -60 | V |
Drain to source voltage | VGSS | ±20 | ±20 | V |
Drain current | ID | 8 | -8 | A |
Drain peak current | ID(pulse)*1 | 32 | -32 | A |
Body to drain diode reverse drain current | IDR | 8 | -8 | A |
Channel dissipation | Pch (Tc = 25)*2 | 28 | W | |
Channel dissipation | Pch*2 | 4 | W | |
Channel temperature | Tch | 450 | ||
Storage temperature | Tstg | 55 to +150 |