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4AM14

Features: • Low on-resistance N-channel: R DS (on) 0.17 , VGS = 10 V ID = 4 A P-channel: R DS (on) 0.2 , VGS = 10 V ID = 4 A• Capable of 4 V gate drive• Low drive current• Hight speed switching• High density mounting• Suitable for H-bridged motor driver•...

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SeekIC No. : 004231787 Detail

4AM14: Features: • Low on-resistance N-channel: R DS (on) 0.17 , VGS = 10 V ID = 4 A P-channel: R DS (on) 0.2 , VGS = 10 V ID = 4 A• Capable of 4 V gate drive• Low drive current• ...

4AM14 Data Sheet

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Part Number:
4AM14
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

• Low on-resistance
   N-channel: R DS (on) 0.17 , VGS = 10 V
   ID = 4 A
   P-channel: R DS (on) 0.2 , VGS = 10 V
   ID = 4 A
• Capable of 4 V gate drive
• Low drive current
• Hight speed switching
• High density mounting
• Suitable for H-bridged motor driver
• Discrete packaged devices of same die
   N-channel: 2SK970 (TO-220AB),
   2SK1093 (TO-220FM)
   P-channel: 2SJ172 (TO-220AB),
   2SJ175 (TO-220FM)


Application

·High speed power switching


Specifications

Item
Symbol
Nch
Pch
Unit
Drain to source voltage
VDSS
60
-60
V
Gate to source voltage
VGSS
±20
±20
V
Drain current
ID
8
-8
A
Drain peak current
ID(pulse)*
32
-32
A
Bodydrain diode reverse drain current
IDR
8
-8
A
Channel dissipation
Pch (Tc =25°C)**
32
W
Channel dissipation
Pch**
4
W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
* PW 10 s, duty cycle 1 %
** 4 devices operation


Description

Silicon N Channel/P Channel Complementary Power MOS FET Array 4AM14


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