Features: Low on-resistance N Channel: RDS(on) 0.17 W, VGS = 10 V, ID = 4 A P Channel: RDS(on) 0.2 W, VGS = 10 V, ID = 4 A High speed switching High density mounting Suitable for H-brided motor driverApplicationHigh speed power switchingSpecifications Item Symbol Ratings Unit Nc...
4AM16: Features: Low on-resistance N Channel: RDS(on) 0.17 W, VGS = 10 V, ID = 4 A P Channel: RDS(on) 0.2 W, VGS = 10 V, ID = 4 A High speed switching High density mounting Suitable for H-brided motor driv...
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Item |
Symbol |
Ratings |
Unit | |
Nch |
Pch | |||
Drain to source voltage |
VDSS |
60 |
-60 |
V |
Gate to source voltage |
VGSS |
±20 |
±20 |
V |
Drain current |
ID |
8 |
-8 |
A |
Drain peak current |
ID(pulse)*1 |
32 |
32 |
A |
Body to drain diode reverse drain current |
IDR |
8 |
-8 |
A |
Channel dissipation |
Pch(Tc = 25)*2 |
28 |
W | |
Channel dissipation |
Pch*2 |
4.0 |
W | |
Channel temperature |
Tch |
150 |
||
Storage temperature |
Tstg |
55 to +150 |