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28F640W18

Features: High Performance Read-While-Write/Erase-Burst frequency at 66 MHz-60 ns Initial Access Read Speed-11 ns Burst-Mode Read Speed-20 ns Page-Mode Read Speed-4-, 8-, 16-, and Continuous-Word Burst Mode Reads-Burst and Page Mode Reads in all Blocks, across all partition boundaries-Burst Suspe...

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SeekIC No. : 004218249 Detail

28F640W18: Features: High Performance Read-While-Write/Erase-Burst frequency at 66 MHz-60 ns Initial Access Read Speed-11 ns Burst-Mode Read Speed-20 ns Page-Mode Read Speed-4-, 8-, 16-, and Continuous-Word B...

28F640W18 Data Sheet

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Part Number:
28F640W18
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High Performance Read-While-Write/Erase
-Burst frequency at 66 MHz
-60 ns Initial Access Read Speed
-11 ns Burst-Mode Read Speed
-20 ns Page-Mode Read Speed
-4-, 8-, 16-, and Continuous-Word Burst Mode Reads
-Burst and Page Mode Reads in all Blocks, across all partition boundaries
-Burst Suspend Feature
-Enhanced Factory Programming at 3.1 s/word (typ.for 0.13 m)
Security
-128-bit Protection Register
-64-bits Unique Programmed by Intel
-64-bits User-Programmable
-Absolute Write Protection with VPP at Ground
-Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability
Quality and Reliability
-Temperature Range: 40 °C to +85 °C
-100k Erase Cycles per Block
-0.13 m ETOX™ VIII Process
-0.18 m ETOX™ VII Process
Architecture
-Multiple 4-Mbit Partitions
-Dual Operation: RWW or RWE
-8KB parameter blocks
-64KB main blocks
-Top or Bottom Parameter Devices
-16-bit wide data bus
Software
-5 s (typ.) Program and Erase Suspend Latency Time
-Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
-Programmable WAIT Signal Polarity
Packaging and Power
-0.13 m: 32-, 64-, and 128-Mbit in VF BGA Package; 128-Mbit in QUAD+ Package
-0.18 m: 32- and 128-Mbit Densities in VF BGA Package; 64-Mbit Density in BGA* Package
-56 Active Ball Matrix, 0.75 mm Ball- Pitch
-VCC = 1.70 V to 1.95 V
-VCCQ = 1.70 V to 2.24 V or 1.35 V to 1.80 V
-Standby current (0.13 m): 8A (typ.)
-Read current: 7mA (typ.)


Specifications

Parameter
Note
Maximum Rating
Temperature under Bias
40 °C to +85 °C
Storage Temperature
65 °C to +125 °C
Voltage on Any Pin (except VCC, VCCQ, VPP)
0.5 V to +2.45 V
VPP Voltage
1,2,3
0.2 V to +14 V
VCC and VCCQ Voltage
1
0.2 V to +2.45 V
Output Short Circuit Current
4
100mA

NOTES:
1. All specified voltages are relative to VSS. Minimum DC voltage is 0.5 V on input/output pins and 0.2 V on VCC and VPP pins. During transitions, this level may undershoot to 2.0 V for periods < 20 ns which, during transitions, may overshoot to VCC +2.0 V for periods < 20 ns.
2. Maximum DC voltage on VPP may overshoot to +14.0 V for periods < 20 ns.
3. VPP program voltage is normally VPP1. VPP can be 12 V ± 0.6 V for 1000 cycles on the main blocks and 2500 cycles on the parameter blocks during program/erase.
4. Output shorted for no more than one second. No more than one output shorted at a time.




Description

This section provides an overview of the W18 device 28F640W18 features, packaging, signal naming, and device architecture.


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