28F640J3A

Features:

 High-Density Symmetrically-Blocked Architecture
    -128 128-Kbyte Erase Blocks (128 M)
    -64 128-Kbyte Erase Blocks (64 M)
    -32 128-Kbyte Erase Blocks (32 M)
High Performance Interface Asynchronous Page Mode Reads
    -110/25 ns Read Access Time (32 M)
    -120/25 ns Read Access Time (64 M)
    -150/25 ns Read Access Time (128 M)
2.7 V3.6 V VCC Operation
128-bit Protection Register
    -64-bit Unique Device Identifier
    -64-bit User Programmable OTP Cells
Enhanced Data Protection Features Absolute Protection with V_PEN = GND
   -Flexible Block Locking
   -Block Erase/Program Lockout during Power Transitions
Packaging
   -56-Lead TSOP Package
   -64-Ball Intel^® Easy BGA Package
Cross-Compatible Command Support Intel Basic Command Set
   -Common Flash Interface
   -Scalable Command Set
32-Byte Write Buffer
   -6 µs per Byte Effective Programming Time
12.8M Total Min. Erase Cycles (128 Mbit)
    6.4M Total Min. Erase Cycles (64 Mbit)
    3.2M Total Min. Erase Cycles (32 Mbit)
     -100K Minimum Erase Cycles per Block
Automation Suspend Options
    -Block Erase Suspend to Read
    -Block Erase Suspend to Program
    -Program Suspend to Read
0.25 µ Intel^® StrataFlash™ Memory Technology


Pinout




Specifications

Parameter	Maximum Rating
Temperature under Bias Expanded	25 °C to +85 °C
Storage Temperature	65 °C to +125 °C
Voltage On Any Pin	2.0 V to +5.0 V(1)
Output Short Circuit Current	100 mA(2)

Description

Capitalizing on Intel's 0.25 µ generation two-bit-per-cell technology, second generation Intel® StrataFlash™ memory products provide 2X the bits in 1X the space, with new features for mainstream performance. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, 28F640J3A bring reliable, two-bit-per-cell storage technology to the flash market segment.

Benefits include: more density in less space, high-speed interface, lowest cost-per-bit NOR devices, support for code and data storage, and easy migration to future devices.

Using the same NOR-based ETOX™ technology as Intel's one-bit-per-cell products, 28F640J3A take advantage of over one billion units of manufacturing experience since 1987. As a result, Intel StrataFlash components are ideal for code and data applications where high density and low cost are required. Examples include networking, telecommunications, digital set top boxes, audio  recording, and digital imaging.

By applying FlashFile™ memory family pinouts, Intel StrataFlash memory components allow easy design migrations from existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash memory (28F640J5 and 28F320J5) devices.

28F640J3A deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.

Manufactured on Intel^® 0.25 micron ETOX™ VI process technology, 28F640J3A provides
the highest levels of quality and reliability.