Features: Flexible SmartVoltage Technology -2.7 V3.6 V Read/Program/Erase -12 V for Fast Production Programming1.65 V2.5 V or 2.7 V3.6 V I/O Option -Reduces Overall System PowerHigh Performance -2.7 V3.6 V: 70 ns Max Access TimeOptimized Architecture for Code Plus Data Storage -Eight 4-Kword Block...
28F640C3(x16): Features: Flexible SmartVoltage Technology -2.7 V3.6 V Read/Program/Erase -12 V for Fast Production Programming1.65 V2.5 V or 2.7 V3.6 V I/O Option -Reduces Overall System PowerHigh Performance -2.7...
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Parameter | Maximum Rating |
Extended OperatingTemperature | 40 °C to +85 °C |
DuringR ead | |
DuringB lock Erase and Program | 40 °C to +85 °C |
Temperature under Bias | 40 °C to +85 °C |
Storage Temperature | 65 °C to +125 °C |
Voltag e On Any Pin (except VCC and VPP) with Respect to GND | 0.5 V to +3.7 V(1) |
VPP Voltage (for Block Erase and Program) with Respect to GND | 0.5 V to +13.5 V(1,2,3) |
VCC and VCCQ Supply Voltage with Respect to GND | 0.2 V to +3.6 V |
Output Short Circuit Current | 100 mA(4) |
This section provides an overview of the 3-Volt Advanced+ Boot Block Flash Memory 28F640C3(x16) features, packaging information , signal names and device architecture