28F6408W30

Features:

 Flash Performance
    -70 ns Initial Access Speed
    -25 ns Page-Mode Read Speed
    -20 ns Burst-Mode Read Speed
    -Burst and Page Mode in All Blocks and
       across All Partition Boundaries
    -Enhanced Factory Programming:
       3.5 µs per Word Program Time
    -Programmable WAIT Signal Polarity
 Flash Power
    -VCC = 1.70 V 1.90 V
    -VCCQ = 2.20 V 3.30 V
    -Standby Current = 6 µA (typ.)
    -Read Current = 7 mA
      (4 word burst, typ.)
 Flash Software
    -5/9 µs (typ.) Program/Erase Suspend Latency
    Time
   -Intel^® Flash Data Integrator (FDI) and
      Common Flash Interface (CFI) Compatible
 Quality and Reliability
  -Operating Temperature:
     25 °C to +85 °C
   -100K Minimum Erase Cycles
   -0.18 µm ETOX™ VII Process
 Flash Architecture
   -Multiple 4-Mbit Partitions
   -Dual Operation: RWW or RWE
   -Parameter Block Size = 4-Kword
   -Main block size = 32-Kword
   -Top and Bottom Parameter Devices 
Flash Security
   -128-bit Protection Register: 64 Unique Device Identifier Bits; 64 User OTP Protection Register Bits
    -Absolute Write Protection with VPP at Ground
    -Program and Erase Lockout during Power Transitions
    -Individual and Instantaneous Block Locking/Unlocking with Lock-Down 
SRAM
    -70 ns Access Speed
    -16-bit Data Bus
    -Low Voltage Data Retention
    -S-VCC = 2.20 V 3.30 V 
Density and Packaging
    -32-Mbit Discrete in VF BGA Package
    -64-Mbit Discrete in µBGA* Package
    -56 Active Ball Matrix, 0.75 mm Ball-Pitch in µBGA* and VF BGA Packages
    -32/4-, 64/8- and 128/TBD- Mbit (Flash + SRAM) in a 80-Ball Stacked-CSP Package (14 mm x 8 mm)
    -16-bit Data Bus


Specifications

Parameter	Note	Maximum Rating
Temperature under Bias		25 °C to +85 °C
Storage Temperature		65 °C to +125 °C
Voltage On Any Signals (except VCC, VCCQ, VPP and S-VCC)	1	0.5 V to +3.80 V
VPP Voltage	1,2,3	0.2 V to +14 V
VCC Voltage	1	0.2 V to +2.40 V
VCCQ and S-VCC Voltage	1	0.2 V to +3.36 V
Output Short Circuit Current	4	100 mA

Description

28F6408W30 combines state-of-the-art Intel^®Flash technology with low power SRAM to provide the most versatile and compact memory solution for high performance, low power, board constraint memory applications.

The 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O offers a multi-partition, dual-operation flash architecture that enables the device to read from one partition while programming or erasing in another partition. This Read-While-Write or Read-While-Erase capability makes it possible to achieve higher data throughput rates as compared to single partition devices and it allows two processors to interleave code execution because program and erase operations can now occur as background processes.

28F6408W30 incorporates a new Enhanced Factory Programming (EFP) mode to improve 12 V factory programming performance. This new feature helps eliminate manufacturing bottlenecks associated with programming high density flash devices. Compare the EFP program time of 3.5 µs per word to the standard factory program time of 8.0 µs per word and save significant factory programming time for improved factory efficiency.

Additionally, 28F6408W30 includes block lock-down, programmable WAIT signal polarity and is supported by an array of software tools. All these features make this product a perfect solution for any demanding memory application.