Features: ApplicationLow forward voltage : VF = 1.0V (typ.)High voltage : VR = 400V (min) Fast reverse recovery time : trr = 0.5s (typ.)Small total capacitance : CT = 2.5pF (typ.) Small package : SC-59PinoutSpecifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VR...
1SS398: Features: ApplicationLow forward voltage : VF = 1.0V (typ.)High voltage : VR = 400V (min) Fast reverse recovery time : trr = 0.5s (typ.)Small total capacitance : CT = 2.5pF (typ.) Small package : SC...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Characteristic |
Symbol |
Rating |
Unit |
Maximum (peak) reverse voltage |
VRM |
420 |
V |
Reverse voltage |
VR |
400 |
V |
Maximum (peak) forward current |
IFSM |
300 * |
mA |
Average forward current |
IO |
100 * |
mA |
Surge current (10ms) |
IFSM |
2 * |
A |
Power dissipation |
P |
150 |
mW |
Junction Temperature |
Tj |
125 |
|
Storage temperature range |
Tstg |
−55∼125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* : Unit rating. Total rating = unit rating * 0.7