Features: ·Small package·Low forward voltage :VF(3) = 0.92 V(Typ)·Fast reverse recovery time :trr = 1.6 ns (Typ)·Small total capacitance :CT = 2.2 pF(Typ)Specifications Characteristic Symbol Rating Unit Maximum (Peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum ...
1SS300: Features: ·Small package·Low forward voltage :VF(3) = 0.92 V(Typ)·Fast reverse recovery time :trr = 1.6 ns (Typ)·Small total capacitance :CT = 2.2 pF(Typ)Specifications Characteristic Symbol ...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
·Small package
·Low forward voltage :VF(3) = 0.92 V(Typ)
·Fast reverse recovery time :trr = 1.6 ns (Typ)
·Small total capacitance :CT = 2.2 pF(Typ)
Characteristic | Symbol | Rating | Unit |
Maximum (Peak) reverse voltage | VRM | 85 | V |
Reverse voltage | VR | 80 | V |
Maximum (Peak) forward current | IFM | 300(*) | mA |
Average forwrad current | IO | 100(*) | mA |
Surge current (10 ms) | IFSM | 2(*) | A |
Power dissipation | P* | 100 | mW |
Junction temperature | Tj | 125 | |
Storage temperature range | Tstg | -55 to + 125 |