Features: Low forward voltage:VF(3) = 0.90 V(Typ)Fast reverse recovery time:trr = 1.6 ns (Typ)Small total capacitance:CT = 0.9 pF(Typ)Specifications Parameter Symbol Rating Unit Maximum(peak) reverse voltageReverse voltageMaximum(peak) fo rward currentAverage forwa rd currentSur...
1SS301: Features: Low forward voltage:VF(3) = 0.90 V(Typ)Fast reverse recovery time:trr = 1.6 ns (Typ)Small total capacitance:CT = 0.9 pF(Typ)Specifications Parameter Symbol Rating Unit M...
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DescriptionThe 1SS302 is designed as one kind of TOSHIBA diode Silicon epitaxial planar type devid...
Parameter |
Symbol |
Rating |
Unit |
Maximum(peak) reverse voltage Reverse voltage Maximum(peak) fo rward current Average forwa rd current Surge current(10m s) Power dissip ation Junction Temperatu re Storage Temperature |
VRM VR IFM IO IFSM P Tj Tstg |
85 80 300(*) 100(*) 2(*) 100 125 -55 to +125 |
V V mA mA A mW |